Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model

作者：Ding Lili^*; Chen Wei; Guo Hongxia; Wang Tan; Chen Rongmei; Luo Yinhong; Zhang Fengqi; Pan Xiaoyu

来源：Microelectronics Reliability, 2018, 81: 337-341.

DOI：10.1016/j.microrel.2017.11.001

• Single event effects
• Well contacts
• Circuit simulation
• TCAD simulation

With technology scaling, a common and efficient strategy to improve the soft error vulnerability of sensitive nodes is to place well/substrate contacts frequently. This paper reports a revised method to integrate the impact of well contacts on SEE response with the bias-dependent SE compact model for circuit simulation. After modifying the SE sub-circuit with resistors and current source placed between the n-well and p-well contacts and then calibrating the parameters by layout-level TCAD simulation results, the resulting model is able to evaluate the SEE vulnerability of devices and circuits with various well contacts. Besides, it is able to evaluate the hardness performance of well contact optimization before fabrication.

• 出版日期2018-2
• 单位西北核技术研究所