A Field-Effect Device Based on an Exfoliated Thin Film of Few-Layer Graphene

作者：Kasjoo S R^*; Ramli M M; Zakaria M R; Arshad M K Md; Ayub R Mat; Rahim R A; Hashim U

来源：11th IEEE International Conference on Semiconductor Electronics (ICSE), 2014-08-27 To 2014-08-29.

DOI：10.1109/smelec.2014.6920874

• charged impurity density
• contact resistance
• field-effect device
• graphene
• mobility
• transconductance

In this work, a back-gated field-effect device based on an exfoliated thin film of few-layer graphene (FLG) has been fabricated and some of its properties were characterized. The estimated hole mobility of the FLG film, extracted from the device transconductance, was approximately 843 cm(2)V(-1)s(-1) which was lower than the typical reported values. The reasons for the lower mobility were briefly discussed in terms of charged impurity density, and contact resistance between FLG film and metal. The use of mechanical exfoliation method in producing thin films of FLG, which is cheap, fast and simple, can also be exploited in the development of other graphene-based devices.

• 出版日期2014