Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

作者：Marino F A; Bisi D^*; Meneghini M; Verzellesi G; Zanoni E; Van Hove M; You S; Decoutere S; Marcon D; Stoffels S; Ronchi N; Meneghesso G

来源：Solid-State Electronics, 2015, 113: 9-14.

DOI：10.1016/j.sse.2015.05.012

• GaN
• HEMT
• Buffer
• Leakage
• Band-to-band
• Temperature

This paper presents an extensive analysis of the off-state conduction mechanisms in AlGaN/GaN Meta-Insulator-Semiconductor (MIS) transistors. Based on combined bi-dimensional numerical simulation and experimental measurements, we demonstrate the following relevant results: (i) under off-state bias conditions, the drain current can show a significant increase when the drain bias is swept up to 600 V; (ii) several mechanisms can be responsible for off-state current conduction, including band-to-band tunneling and impact ionization; (iii) two-dimensional numerical simulations indicate that band-to-band tunneling plays a major role, while impact ionization does not significantly contribute to the overall leakage. Temperature-dependent I-V measurements were also carried out to identify the origin of the vertical drain-bulk leakage.

• 出版日期2015-11