Stability Evaluation of Insulated Gate AlGaN/GaN Power Switching Devices Under Heavy-Ion Irradiation

作者：Stoffels Steve^*; Melotte Michel; Haussy Magali; Venegas Rafael; Marcon Denis; Van Hove Marleen; Decoutere Stefaan

来源：IEEE Transactions on Nuclear Science, 2013, 60(4): 2712-2719.

DOI：10.1109/TNS.2013.2272331

• AlGaN/GaN HEMT
• Gallium nitride
• heavy-ion irradiation
• High-K gate dielectrics
• MISHEMT
• SEGR
• SET

Depletion mode insulated gate AlGaN/GaN power switching HEMTs were evaluated for stability under heavy-ion irradation. Experiments were performed for different types of heavy-ion species, values of gate bias, drain bias, and device geometry. For the insulated gate AlGaN/GaN devices, an as-of-yet unobserved single-event occurred, which we have termed single-event switching (SES). These SES events occurred next to previously observed single-event gate rupture (SEGR) events. It was found that the SES events were gate leakage dependent and stopped occurring above a certain threshold value of gate leakage. Statistical analysis showed that the cross section for single SES events exhibited a lognormal distribution with a median value close to the gate area, and the capture cross section exhibited a slight voltage dependence. The gate leakage after irradiation, on the other hand, was exponentially distributed and was strongly voltage and geometry dependent, indicating an electric field dependency.

• 出版日期2013-8