Numerical study of flicker noise in p-type Si(0.7)Ge(0.3)/Si heterostructure MOSFETs

作者：Chen Chia Yu^*; Liu Yang; Dutton Robert W; Sato Iwanaga Junko; Inoue Akira; Sorada Haruyuki

来源：IEEE Transactions on Electron Devices, 2008, 55(7): 1741-1748.

DOI：10.1109/TED.2008.925329

• flicker noise
• heterostructure
• MOSFETs
• SiGe
• 1/f noise

Device-level simulation capabilities have been developed to investigate low-frequency noise behavior in p-type Si(0.7)Ge(0.3)/Si heterostructure MOS (SiGe p-HMOS) transistors. The numerical model is based on the impedance field method; it accounts for a trap-induced carrier number fluctuation, a layer-dependent correlated mobility fluctuation, and a Hooge mobility fluctuation in the buried and parasitic surface channels, respectively. Simulations based on such models have been conducted for SiGe p-HMOS transistors, and the results have been carefully correlated with experimental data. Quantitative agreement has been obtained in terms of the noise level dependence on gate biases, drain currents, and body biases, revealing the important role of the dual channels in the low-frequency noise behavior of SiGe p-HMOS devices.

• 出版日期2008-7