科研之友
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摘要
The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultrathin layers for operation as field-effect transistors. Despite the susceptibility of black phosphorus to photo-oxidation, improvements to the electronic quality of black phosphorus devices has culminated in the observation of the quantum Hall effect. In this paper, we demonstrate the room-temperature operation of a dual-gated black phosphorus transistor operating as a velocity-modulated transistor, whereby modification of hole density distribution within a black phosphorus quantum well leads to a twofold modulation of hole mobility. Simultaneous modulation of Schottky-barrier resistance leads to a fourfold modulation of transconductance at a fixed hole density. Our work explicitly demonstrates the critical role of charge-density distribution upon charge carrier transport within 2D atomic crystals.
- 出版日期2016-6-9
