The effect of ALD-Zno layers on the formation of CH3NH3PbI3 with different perovskite precursors and sintering temperatures

作者:Dong, Xu; Hu, Hongwei; Lin, Bencai; Ding, Jianning*; Yuan, Ningyi
来源:Chemical communications, 2014, 50(92): 14405-14408.
DOI:10.1039/c4cc04685d

摘要

ZnO films deposited by atomic layer deposition at 70 degrees C were used to fabricate perovskite solar cells, and a conversion efficiency of 13.1% was obtained. On the ZnO layer, CH3NH3PbI3 was formed at room temperature using CH3NH3I and PbCl2 precursors, which is in contrast to the reported results.