Assessment of NBTI in Presence of Self-Heating in High-k SOI FinFETs

作者：Monga Udit^*; Khandelwal Sourabh; Aghassi Jasmin; Sedlmeir Josef; Fjeldly Tor A

来源：IEEE Electron Device Letters, 2012, 33(11): 1532-1534.

DOI：10.1109/LED.2012.2213572

• FinFET
• negative bias temperature instability (NBTI)
• reliability
• self-heating (SH)
• silicon-on-insulator (SOI)
• thermal resistance

We have experimentally investigated the threshold voltage shift due to negative bias temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is performed at two different temperatures, i.e., T = 25 degrees C and 125 degrees C, at bias conditions: gate voltage V-gs = -2 V and drain voltage V-ds = 0 V. To evaluate the effect of NBTI in the presence of SH, the stress is performed at room temperature and at V-gs = -2 V and V-ds = -1 V. It has been observed that NBTI in the presence of SH causes a significant shift in the threshold voltage.

• 出版日期2012-11