Substrate-Induced Noise Model and Parameter Extraction for High-Frequency Noise Modeling of Sub-Micron MOSFETs

作者：Ong Shih Ni^*; Yeo Kiat Seng; Chew Kok Wai Johnny; Chan Lye Hock Kelvin

来源：IEEE Transactions on Microwave Theory and Techniques, 2014, 62(9): 1973-1985.

DOI：10.1109/TMTT.2014.2340375

• Channel thermal noise
• high-frequency noise modeling
• gate-current noise
• MOSFET
• substrate-induced drain-current noise
• substrate noise
• thermal noise

In this paper, a substrate-induced drain-current noise model is developed in addition to the channel thermal noise to explain the non-white-noise characteristic found in the measured drain-current noise in the gigahertz range. The substrate-induced drain-current noise model is derived from the proposed small-signal equivalent circuit with a substrate coupling network and a substrate thermal noise source. The model parameter extraction method utilizing - parameter analysis on the proposed small-signal equivalent circuit is demonstrated. The model for the total drain-current noise, the gate-current noise, their cross-correlation, and thereafter the four noise parameters is presented and verified experimentally. Excellent agreement between simulated and measured noise data has been obtained over different dimensions and operating conditions.

• 出版日期2014-9
• 单位南阳理工学院