A Large "Read" and "Write" Margins, Low Leakage Power, Six-Transistor 90-nm CMOS SRAM

作者：Enomoto Tadayoshi^*; Kobayashi Nobuaki

来源：IEICE - Transactions on Electronics, 2011, E94C(4): 530-538.

DOI：10.1587/transele.E94.C.530

• SRAM
• leakage power
• &quot
• write&quot
• margin
• &quot
• read&quot
• margin

We developed and applied a new circuit, called the "Self-controllable Voltage Level (SVL)" circuit, to achieve an expanded "read" and "write" margins and low leakage power in a 90-nm, 2-kbit, six-transistor CMOS SRAM. At the threshold voltage fluctuation of 6 sigma, the minimum supply voltage of the newly developed (dvlp.) SRAM for "write" operation was significantly reduced to 0.11 V. less than half that of an equivalent conventional (cony.) SRAM. The standby leakage power of the dvlp. SRAM was only 1.17 mu W, which is 4.64% of that of the cony. SRAM at supply voltage of 1.0 V. Moreover, the maximum operating clock frequency of the dvlp. SRAM was 138 MHz, which is 15% higher than that (120 MHz) of the cony. SRAM at V-MM of 0.4 V. An area overhead was 0.81% that of the cony. SRAM.

• 出版日期2011-4