摘要

The un-doped (MgB2)-B-11 and Cu-doped (MgB2)-B-11 bulks using B-11 as a boron precursor were fabricated by solid-state reaction and sintered at different temperature in present work. By analyzing the sintering process, it was found that B-11 original powder is more reactive and can react with Mg severely even at low temperature before Mg melting, which leads to the formation of refined (MgB2)-B-11 grains. Consequently, the critical current density of (MgB2)-B-11 sample prepared in this work is higher than that of natural MgB2. Furthermore, it was found that proper Cu addition could obviously accelerate the reaction between Mg and B-11 and promote the formation of (MgB2)-B-11 due to the appearance of Mg-Cu liquid at low sintering temperature before Mg melting. On the other hand, Cu addition also introduced more MgCu(2)impurity, leading to a relatively lower critical current density on the whole. Interestingly, the critical current density of the Cu doped sample sintered at 800 degrees C is surprisingly enhanced at the low field, compared with that of the corresponding un-doped one. This is due to the peritectic reaction which generated small-sized MgCu2 occurred that at 800 degrees C, providing MgCu2 pinning centers well-distributed in the MgB2 matrix.