A Novel Scaling Theory for Fully Depleted, Multiple-Gate MOSFET, Including Effective Number of Gates (ENGs)

作者：Chiang Te Kuang^*

来源：IEEE Transactions on Electron Devices, 2014, 61(2): 631-633.

DOI：10.1109/TED.2013.2294192

• DIBL
• double-gate (DG) MOSFET
• effective number of gates (ENGs)
• minimum effective channel length improvement factor (MECLIF)
• multiple-gate (MG) MOSFET

This brief presents a novel scaling theory for fully depleted, multiple-gate (MG) MOSFET. The scaling theory is derived from the equation for effective number of gates (ENGs), ENG(QG) = ENG(DG,1) + ENG(DG,2), where the MG device can be genuinely broken into two equivalent double-gate (DG) transistors working in parallel based on the perimeter-weighted-sum method. Numerical device simulation data for drain-induced-barrier-lowering were compared with the model to validate the formula. Using the scaling theory, the minimum effective channel length improvement factor of rho(MG) = 1 - (ENG(DG)/ENG(MG))(1/2) shows an improvement of up to 30% in the minimum effective channel length for the MG MOSFET in comparison with DG MOSFET.

• 出版日期2014-2