Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip

作者：Popov V V^*; Yermolaev D M; Maremyanin K V; Zemlyakov V E; Maleev N A; Gavrilenko V I; Bespalov V A; Yegorkin V I; Ustinov V M; Shapoval Yu

来源：Applied Physics Letters, 2014, 104(16): 163508.

DOI：10.1063/1.4873540

A tightly concatenated chain of InGaAs field-effect transistors with an asymmetric T-gate in each transistor demonstrates strong terahertz photovoltaic response without using supplementary antenna elements. We obtain the responsivity above 1000 V/W and up to 2000 V/W for unbiased and drain-biased transistors in the chain, respectively, with the noise equivalent power below 10(-11) W/Hz(0.5) in the unbiased mode of the detector operation.

• 出版日期2014-4-21