Dependence of the Hall Coefficient on Doping Concentration in Doped Semiconductor Superlattices with a Perpendicular Magnetic Field under the Influence of a Laser Radiation

作者：Nguyen Quang Bau^*; Bui Dinh Hoi

来源：Integrated Ferroelectrics, 2014, 155(1): 39-44.

DOI：10.1080/10584587.2014.905109

• Hall coefficient
• SdH oscillation
• doped superlattice
• quantum kinetic equation

The dependence of the Hall coefficient on doping concentration in doped semiconductor superlattices (DSSLs) under a crossed dc electric field and magnetic field in the presence of a laser radiation, is investigated by using a quantum kinetic equation for electrons. Analytical results for the resistance and the Hall coefficient (HC) are computationally evaluated and graphically plotted for the GaAs:Si/GaAs:Be DSSL. Numerical results for the magnetoresistance are in accordance with available theories. The dependence of the HC on the doping concentration shows an oscillation whose phase is strongly affected by the laser radiation.

• 出版日期2014