Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors

作者：Notargiacomo A^*; Bagni R; Giovine E; Foglietti V; Carta S; Pea M; Di Gaspare L; Capellini G; Evangelisti F

来源：Microelectronic Engineering, 2011, 88(8): 2714-2716.

DOI：10.1016/j.mee.2010.11.046

• Air-bridge technology
• Epitaxial germanium
• Reactive ion etching
• Schottky diode
• Infrared detector

We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF6 was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates.

• 出版日期2011-8