摘要
This paper reports the performance of small area solar cells, 128 linear integrated position sensitive detector arrays and thin film transistors based on nanostructured silicon thin films produced by plasma-enhanced chemical vapour deposition technique, close to the onset of dusty plasma conditions, within the transition region from amorphous to microcrystalline. The small area solar cells, produced in a modified single chamber reactor, exhibited very good electrical characteristics with a conversion efficiency exceeding 9%. The 128 integrated position sensitive detector arrays, based on a similar pin structure, allow real-time 3D object imaging with a resolution higher than 901 p/mm. The thin film transistors produced exhibited field effect mobility of 2.47 cm(2)/V/s, threshold voltage of 2V, on/off ratio larger than 10(7) and sub-threshold slopes of 0.32 V/decade, which are amongst the best results reported for this type of device.
- 出版日期2009