Using the light scattering properties of multi-textured AZO films on inverted hemisphere textured glass surface morphologies to improve the efficiency of silicon thin film solar cells

作者：Hussain Shahzada Qamar; Le Anh Huy Tuan; Mallem Kumar; Park Hyeongsik; Ju Minkyu; Kim Yongjun^*; Cho Jaehyun; Park Jinjoo; Kim Youngkuk^*; Yi Junsin^*

来源：Applied Surface Science, 2018, 447: 866-875.

DOI：10.1016/j.apsusc.2018.03.143

• Light scattering
• X-ray photoelectron spectroscopy
• Inverted hemisphere
• Multi-textured AZO films
• Absorber layer
• Amorphous silicon thin film solar cell

We report the light scattering characteristics of multi-textured aluminum-doped zinc oxide (AZO) thin films with high optical transmittance, haze ratio and step coverage for amorphous silicon thin film solar cells (a-Si TFSCs). Multi-textured AZO films were deposited on inverted hemisphere textured (IHT) glass surface morphologies. Multi-textured process was used to create modulated surface morphologies with micro and nano-features useful for the light scattering in visible as well as near-infrared wavelength region. Highly transparent IHT glass surface morphologies with high haze ratio were prepared by wet chemical etching of periodic glass substrates. Total transmittance of the IHT glass substrates showed higher average values (91.38-93.40%) as compared to that of bare glass (90.94%) in the visible wavelength region due to lower reflectance. Multi-textured AZO films showed higher rms roughness 100.479 nm, optical transmittance 82.60% and haze ratio 75.09% in the visible wavelength region. X-ray photoelectron spectroscopic analysis of multi-textured AZO thin films was used to study the atomic compositions and chemical binding states. Multi-textured AZO films with high transmittance and haze ratio were used as front transparent conductive oxide layers for the fabrication of a-Si TFSCs using an absorber layer thickness of 400 nm. Multi-textured AZO films deposited on the optimal textured glass surface morphologies yield the maximum performance of a-Si TFSCs as; V-OC = 871 mV, J(SC) = 16.55 mA/cm(2), FF = 66.6% and eta = 9.61%. An enhancement of photocurrent was noticed from 15.64 to 16.55 mA/cm(2) for the a-Si TFSCs deposited on as deposit AZO to optimal textured AZO films.

• 出版日期2018-7-31