Stability and thermoelectric properties of ITON:Pt thin film thermocouples

作者：Zhao, Xiaohui^*; Yang, Ke; Wang, Yiran; Chen, Yinzhi; Jiang, Hongchuang

来源：Journal of Materials Science: Materials in Electronics , 2016, 27(2): 1725-1729.

DOI：10.1007/s10854-015-3946-7

• MICROSTRUCTURE
• TEMPERATURE

Refractory thin film thermocouples can provide more accurate surface temperature measurement and faster response with excellent chemical and electrical stability at high temperatures in harsh oxidizing environment. Indium tin oxide (ITO) thin films were fabricated by radio frequency magnetron sputtering in gas mixture of Ar and N-2. The introduction of nitrogen results in significant variations of the electrical and thermoelectric property of ITO thin films. This nitrogen doped ITO thin film was used as negative thermal element to form ITON:Pt thin film thermocouple on Ni-based superalloy substrate. The stability and thermoelectric performance of this thin film thermocouple was investigated up to 1000 A degrees C.

• 出版日期2016-2
• 单位电子科技大学