NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n(+) deep well

作者：Liu Bi Wei^*; Chen Jian Jun; Chen Shu Ming; Chi Ya Qin

来源：Acta Physica Sinica, 2012, 61(9): 096102.

• charge sharing
• SEE
• n(+) deep well
• bipolar amplification effect

In this paper, we investigate the charge sharing collection induced by heavy ion radiation in a tripe well CMOS technology with n(+) deep well though 3-D TCAD device simulation. Result shows that n(+) deep well will induce the parasitical NPN bipolar transistor, and therefore enhance the charge sharing between NMOS remarkably. The enhancement factor is 2-4 times that in PNP bipolar in dual well technology. Furthermore, the effects of n-well contact and p-well contact on NPN bipolar are studied. The result shows that the NPN bipolar enhancement factor will decrease with the increase of p-well contact area and with the decreasing of its distance to device, while the NPN bipolar enhancement factor will increase with the increase of n-well contact area.

• 出版日期2012-5
• 单位中国人民解放军国防科学技术大学