Morphology and Dielectric Properties of Boron-doped BaTiO3

作者：Zheng, Zhuo Qun; Zhou, Xiao Ping^*

来源：High Temperature Materials and Processes, 2013, 32(2): 179-187.

DOI：10.1515/htmp-2012-0116

• BaTiO3
• boron doping
• grain growth
• phase transformation
• dielectric constant

Boron-doped BaTiO3 precurors (BaTi1-xB2xO3+X) were prepared via the glycol-glycerol complexes of boron, titanium (IV), and barium. With optimum composition, ceramics with dielectric properties comparable to those of pristine BaTiO3 ceramic sintered at 1300 degrees C can be obtained after sintered at temperature less than 900 degrees C (room-temperature dielectric constant similar to 4000, dielectric strength similar to 7.0 kV/mm). The appreciable decrease in sintering temperature is attributable to (a) addition of boron dopant as substitute of titamium rather than to stochiometric BaTiO3, and (b) application of glycol-glycerol solvents/-ligands in the synthesis of precursors, which guarantees the compositional homogenization of the final ceramics.

• 出版日期2013-4
• 单位湖南大学