Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope

作者：Bosman M^*; Tang L J; Ye J D; Tan S T; Zhang Y; Keast V J

来源：Applied Physics Letters, 2009, 95(10): 101110.

DOI：10.1063/1.3222974

• arsenic
• cadmium compounds
• doping profiles
• electron energy loss spectra
• energy gap
• gallium compounds
• III-V semiconductors
• II-VI semiconductors
• indium compounds
• ion implantation
• nanostructured materials
• Raman spectra
• scanning electron microscopy
• semiconductor doping
• semiconductor quantum wells
• transmission electron microscopy
• wide band gap semiconductors
• zinc compounds

Monochromated low-loss EELS (electron energy-loss spectroscopy) is explored as an analytical technique for nanoscale mapping of the electronic band gap energy on arsenic-implanted ZnO, CdZnO, and InGaN compounds. Its accuracy is confirmed independently with Raman spectroscopy. From a ternary compound, the relationship between the band gap energy and the chemical composition is determined, a powerful application of low-loss EELS. The effects of electron beam delocalization are discussed using examples from In0.25Ga0.75N quantum wells.

• 出版日期2009-9-7