Ultraviolet/orange bicolor electroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode

作者：Huang, Huihui; Fang, Guojia^*; Li, Songzhan; Long, Hao; Mo, Xiaoming; Wang, Haoning; Li, Yuan; Jiang, Qike; Carroll, David L.; Wang, Jianbo; Wang, Mingjun; Zhao, Xingzhong

来源：Applied Physics Letters, 2011, 99(26): 263502.

DOI：10.1063/1.3672051

• electroluminescence
• gallium compounds
• II-VI semiconductors
• light emitting diodes
• semiconductor heterojunctions
• wide band gap semiconductors
• zinc compounds

We fabricate an ultraviolet (UV)/orange bicolor light emitting diode (LED) based on an n-ZnO/n-GaN isotype heterojunction, which presents a sharp ultraviolet emission centered at 367 nm and a broad orange emission centered at 640 nm under forward and reverse biases, respectively. Time dependence electroluminescence (EL) measurements reveal that this device shows good stability. The electroluminescence mechanism of the bicolor light emitting diode is discussed in terms of the material properties of the interfacial layer and the luminescence properties of the device in this work.

• 出版日期2011-12-26
• 单位武汉纺织大学; 武汉大学