Bi(2)O(3) nanowire growth from high-density Bi nanowires grown at a low temperature using aluminum-bismuth co-deposited films

作者：Park Yeon Woong; Jung Hyun June; Yoon Soon Gil^*

来源：Sensors and Actuators B: Chemical , 2011, 156(2): 709-714.

DOI：10.1016/j.snb.2011.02.023

• Bi(2)O(3) nanowires
• Bi nanowires
• Bi-Al co-sputtered films
• Low temperature
• Gas sensing
• DC sputtering

Single crystalline Bi(2)O(3) nanowires were prepared by annealing in oxygen ambient using pure Bi nanowires grown at a low vacuum (similar to 10(-6) Torr) with Bi-Al co-sputtered films. The ability to grow Bi nanowires using Bi-Al co-sputtered films can be attributed to the suppression of the oxidation of the bismuth by the preferred oxidation of aluminum in co-sputtered ambient (similar to mTorr). The Bi nanowires from the Bi-Al co-sputtered films could be grown even at the low temperature of 230 degrees C in low-vacuum ambient. The Bi(2)O(3) nanowires prepared from the Bi nanowires showed a single crystalline structure with (1 1 1), ((1) over bar 2 2), (1 2 0), and (0 1 2) planes. The current-voltage (I-V) relationship of the Bi(2)O(3) nanowire revealed that the Bi(2)O(3) nanowire exhibited a semiconducting property with a resistivity of 14.6 Omega-cm. Variations in resistance of the Bi(2)O(3) single nanowire as a function of time at 350 degrees C showed reproducible response and recovery time characteristics for each concentration of NO. The electric resistance of the Bi(2)O(3) single nanowire was sensitive to NO gas even at 10 ppm.

• 出版日期2011-8