Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators

作者：Stoliar Pablo^*; Cario Laurent; Janod Etiene; Corraze Benoit; Guillot Deudon Catherine; Salmon Bourmand Sabrina; Guiot Vincent; Tranchant Julien; Rozenberg Marcelo

来源：Advanced Materials, 2013, 25(23): 3222-3226.

DOI：10.1002/adma.201301113

• resistive switching
• strongly correlated systems
• Mott insulators
• V2O3
• NiS2
• AM4 Q8

A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.

• 出版日期2013-6-18