Depth profiling of dopants implanted in Si using the synchrotron radiation based high-resolution grazing emission technique

作者：Kayser Y^*; Banas D; Cao W; Dousse J Cl; Hoszowska J; Jagodzinski P; Kavcic M; Kubala Kukus A; Nowak S; Pajek M; Szlachetko J

来源：X-Ray Spectrometry, 2012, 41(2): 98-104.

DOI：10.1002/xrs.2372

We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.

• 出版日期2012-4