A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements

作者：Bisoyi Sibani; Roedel Reinhold; Zschieschang Ute; Kang Myeong Jin; Takimiya Kazuo; Klauk Hagen; Tiwari Shree Prakash^*

来源：Semiconductor Science and Technology, 2016, 31(2): 025011.

DOI：10.1088/0268-1242/31/2/025011

• thin-film transistors
• charge trapping
• organic semiconductors
• displacement current measurements

A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C-10-DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm(2) V-1 s(-1). The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 10(12) cm(-2), despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior.

• 出版日期2016-2
• 单位RIKEN