A Source-Side Injection Lucky Electron Model for Schottky Barrier Metal-Oxide-Semiconductor Devices

作者：Shih Chun Hsing^*; Liang Ji Ting; Wang Jhong Sheng; Chien Nguyen Dang

来源：IEEE Electron Device Letters, 2011, 32(10): 1331-1333.

DOI：10.1109/LED.2011.2162577

• Lucky electron model
• metal-oxide-semiconductor (MOS)
• Schottky barrier
• source-side injection

This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric field is derived from the solutions of 2-D Poisson's equations. The conformal-mapping method is used to estimate the gate electrode contribution to determine the source-side injected probability. 2-D device simulations confirm the agreements between the analytical models and the numerical results. This study provides a physical understanding of enhanced source-side injection in new Schottky barrier nonvolatile memory.

• 出版日期2011-10