Flexoelectric Rectification of Charge Transport in Strain-Graded Dielectrics

作者：Lee Daesu; Yang Sang Mo; Yoon Jong Gul; Noh Tae Won^*

来源：Nano Letters, 2012, 12(12): 6436-6440.

DOI：10.1021/nl3038129

• Epitaxial thin film
• flexoelectricity
• local transport
• nanoscale strain gradient

Flexoelectricity is emerging as a fascinating means for exploring the physical properties of nanoscale materials. Here, we demonstrated the unusual coupling between electronic transport and the mechanical strain gradient in a dielectric epitaxial thin film. Utilizing the nanoscale strain gradient, we showed the unique functionality of flexoelectricity to generate a rectifying diode effect. Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern the local transport characteristics, including spatial conduction inhomogeneities, in thin-film epitaxy systems. Consideration of the flexoelectric effect will improve understanding of the charge conduction mechanism at the nanoscale and may facilitate the advancement of novel nanoelectronic device design.

• 出版日期2012-12