Metal-insulator-SiC Schottky structures using HfO2 and TiO2 dielectrics

作者：Kaufmann I R^*; Pick A; Pereira M B; Boudinov H

来源：Thin Solid Films, 2017, 621: 184-187.

DOI：10.1016/j.tsf.2016.11.053

• MIS structure
• SiC
• Schottky barrier height
• HfO2
• TiO2

Metal-Insulator-Semiconductor Schottky diodes were fabricated on SiC, as a potential use for particle detectors. Nickel was used as Schottky and back ohmic contacts. The dielectrics HfO2 and TiO2 were investigated as insulating layers and deposited by Atomic Layer Deposition, with thicknesses of 1,2 and 4 nm. Current-Voltage curves were extracted from the diodes, varying the measurement temperature (297 K-373 K). Apparent and real Schottky Barrier Heights (SBHapparent and SBFIreal), ideality factor eta and insulating layer thicknesses were extracted from the I-V curves. Thicker insulating layers produce higher eta and reduce the SBHreal value, for both dielectrics. An interfacial layer of silicon oxycarbide with thickness of 0.2 nm was estimated for all diodes. The SBHreal goes from 122 V to 0.66 V and from 1.26 V to 0.59 V, for thicknesses of 1 nm and 4 nm of HfO2 and TiO2, respectively. The reverse currents for all structures at 40 V of bias are of order of tens of pA at room temperature.

• 出版日期2017-1-1