摘要
In this paper the oxidation kinetics of SiC has been studied as per both experimental and theoretical aspects based on current literatures, from which the shortcoming of theory has been discussed. A new model has been introduced that can express the oxidation weight gain as a function of temperature, oxygen partial pressure and the size of materials explicitly. Two examples, chemical vapor deposition (CVD) SiC pellet and ZrB(2)-SiC pellet, have been selected to test our new model and the calculated results show that our new model can tit both isothermal and non-isothermal data very well. Therefore, it is expected that this new model could be used to predict the oxidation behavior of SiC materials based on limited experimental information.
- 出版日期2009-3
- 单位上海大学