Unipolar resistive switching behavior of amorphous YCrO3 films for nonvolatile memory applications

作者：Sharma Yogesh^*; Misra Pankaj; Katiyar Ram S

来源：Journal of Applied Physics, 2014, 116(8): 084505.

DOI：10.1063/1.4893661

Amorphous YCrO3 (YCO) films were prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of similar to 10(5) between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space-charge limited conduction mechanisms, respectively.

• 出版日期2014-8-28