UV irradiation effects on hydrogen sensors based on SnO2 thin films fabricated by the photochemical deposition

作者：Ao Dengbaoleer^*; Ichimura Masaya

来源：Solid-State Electronics, 2012, 69: 1-3.

DOI：10.1016/j.sse.2011.11.024

• Photochemical deposition (PCD)
• SnO2
• Hydrogen gas sensor
• UV irradiation

We fabricated highly sensitive room temperature hydrogen sensors based on SnO2 films. The films were deposited by the photochemical deposition. The deposition solution containing 10 mmol/L of SnSO4 was dropped on the substrate and irradiated with light of an Hg arc lamp. The sample annealed at 200 degrees C showed resistance decrease by a factor %26gt;10(3) for a 0.05% H-2 + Ar mixed gas (0.1 atm) at room temperature. The sensitivity and response speed were further improved by UV irradiation using a low-pressure Hg lamp both in vacuum and in air.

• 出版日期2012-3