A stable, low turn-on field of SnO2 : Sb-SiO2 core-shell nanocable emitters

作者:Wu Jyh Ming*; Kuo Cheng Hsiang
来源:Journal of Physics D: Applied Physics , 2009, 42(12): 125401.
DOI:10.1088/0022-3727/42/12/125401

摘要

Nanocables have been formed with Sb-doped SnO2 (SnO2 : Sb) cores and SiO2 shells. First, SnO2 : Sb nanowires were synthesized by a vapour-liquid-solid process at 900 degrees C. Subsequently, thin SiO2 shells were deposited onto the surfaces of these SnO2 : Sb nanowires. Thin-film x-ray diffraction showed that all the as-synthesized core-shell nanocables had a single-phase SnO2 rutile structure. Field emission scanning electron microscopy revealed that the nanocables had diameters of 80-140 nm and lengths of up to several hundred micrometres. As-synthesized SnO2 : Sb-SiO2 core-shell nanocables revealed an extremely low turn-on field, similar to 0.35 V mu m(-1), which was seven times lower than the similar to 2.3 V mu m(-1) field of SnO2 : Sb nanowires.

  • 出版日期2009-6-21