摘要
The prospective application of flexible electronics is feasible by shielding the silicon ribbons from damage in the structure. The silicon failure in the design of strain isolation for stretchable and flexible sensors is analyzed by FEM. The destruction of the silicon circuit is different with the change of the thickness of the PDMS layer in stretchable sensors. Owing to the fact that the PDMS layer is not infinitely thick in the application, the purpose of the paper is to provide a reference for choosing the thickness of the PDMS layer in the design of stretchable sensors.
- 出版日期2013
- 单位西安理工大学