Alpha-ray spectrometry at high temperature by using a compound semiconductor detector

作者：Ha Jang Ho^*; Kim Han Soo

来源：Applied Radiation and Isotopes, 2013, 81: 165-168.

DOI：10.1016/j.apradiso.2013.03.043

• SiC
• Alpha-particle spectroscopy
• Radiation hardness
• High temperature environment
• Semiconductor detector

The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an Am-241 source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30 degrees C to 250 degrees C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation.

• 出版日期2013-11