Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

作者：Mitoma, Nobuhiko^*; Aikawa, Shinya; Wei Ou Yang; Gao, Xu; Kizu, Takio; Lin, Meng Fang; Fujiwara, Akihiko; Nabatame, Toshihide; Tsukagoshi, Kazuhito

来源：Applied Physics Letters, 2015, 106(4): 042106.

DOI：10.1063/1.4907285

• Amorphous indium-oxide
• Channel conductivity
• Charge-screening effects
• Cross sectional area
• Dopant selection
• Dopant species
• Oxidized films
• Thin film transistors (TFTs)

The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si-and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

• 出版日期2015-1-26
• 单位华东师范大学; 苏州大学