As-doped p-type ZnO films grown on SiO(2)/Si by radio frequency magnetron sputtering

作者：Fan, J C; Xie, Z^*

来源：Applied Surface Science, 2008, 254(20): 6358-6361.

DOI：10.1016/j.apsusc.2008.03.193

• arsenic dopant
• p-type ZnO film
• SiO(2)/Si substrate
• homojunction

p-Type ZnO: As films with a hole concentration of 10(16)-10(17) cm (3) and a mobility of 1.32-6.08 cm(2)/V s have been deposited on SiO(2)/Si substrates by magnetron sputtering. XRD, SEM, Hall measurements are used to investigate the structural and electrical properties of the films. A p-n homojunction comprising an undoped ZnO layer and a ZnO: As layer exhibits a typical rectifying behavior. Our study demonstrates a simple method to fabricate reproducible p-type ZnO film on the SiO(2)/Si substrate for the development of ZnO-based optoelectronic devices on Si-based substrates.

• 出版日期2008-8-15
• 单位湖南大学