A CMOS 3-12-GHz Ultrawideband Low Noise Amplifier by Dual-Resonance Network

作者：Li, Nan; Feng, Weiwei; Li, Xiuping^*

来源：IEEE Microwave and Wireless Components Letters, 2017, 27(4): 383-385.

DOI：10.1109/LMWC.2017.2679203

• Common gate (CG)
• common source (CS)
• low noise amplifier (LNA)
• matching network
• ultrawideband (UWB)

A low-power and high power-gain (S21) ultrawideband low noise amplifier (UWB LNA) with flat noise figure (NF) based on Global Foundies 0.13-mu m CMOS technology is reported. The load effect of common-gate (CG) topology is applied with dual-resonance load network for both wideband input matching and NF flatness. Combined with inductive-series peaking technique, the frequency response of CG-common-source cascade topology is further extended. The LNA circuit achieves the high and flat power gain of 13.5 +/- 1.5 dB with input return loss better than 13 dB and a flat NF of 4.3 dB +/- 0.4 dB for frequencies 3-12 GHz. The fabricated LNA occupies a die area of 1.09 0.8 mm2 including pads and draw 8.5 mW from 1.2-V dc supply.

• 出版日期2017-4
• 单位北京邮电大学