Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As

作者：Mehari Shlomo^*; Gavrilov Arkady; Cohen Shimon; Shekhter Pini; Eizenberg Moshe; Ritter Dan

来源：Applied Physics Letters, 2012, 101(7): 072103.

DOI：10.1063/1.4746254

The temperature dependence of the current-voltage characteristics of Ni-InGaAs alloy Schottky contacts to n-In0.53Ga0.47As was measured. Nearly ideal plots with an ideality factor close to unity were obtained. The Arrhenius curve across the wide temperature range of 80-300 K was perfectly linear, yielding a barrier height of 0.239 +/- 0.01 eV. This value is substantially larger than previously reported. Conventional metal based Schottky diodes did not exhibit an ideal Schottky behavior. The ideal Schottky diode characteristics are attributed to the lack of oxidation and contamination of the interface between Ni-InGaAs and InGaAs.

• 出版日期2012-8-13