A model for the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor

作者：Sun, Jing; Zheng, Xue Jun^*; Li, Wen

来源：Current Applied Physics, 2012, 12(3): 760-764.

DOI：10.1016/j.cap.2011.11.001

• Metal-ferroelectric-insulator-semiconductor field-effect transistor
• Modeling
• Capacitancee-voltage characteristics
• Currente-voltage characteristics

An improved theoretical model on the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) has been proposed by considering the history-dependent electric field effect and the mobility model. The capacitance-voltage (C-V) characteristics of MFIS structure is evaluated by combining the switching physics of ferroelectric with the silicon physics, and the drain current-gate voltage (I-D-V-GS) and drain current-drain voltage (I-D-V-DS) characteristics of MFIS-FET are modeled by combining the switching physics of ferroelectric with Pao and Sah's double integral. For two MFIS-FETs with SrBi2Ta2O9 and (Bi, La)4Ti(3)O(12) ferroelectric layers, the C-V, I-D-V-GS and I-D-V-DS characteristics are simulated by using the improved model, and the results are more consistent with the previous experiment than those based on Lue model, indicating that the improved model is suitable for simulating the electrical characteristics of MFIS-FET. This work is expected to provide some guidance to the design and performance improvement of MFIS structure devices.

• 出版日期2012-5
• 单位上海理工大学; 湘潭大学