n-Type CVD diamond: Epitaxy and doping

作者：Pinault Thaury M A^*; Tillocher T; Habka N; Kobor D; Jomard F; Chevallier J; Barjon J

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2011, 176(17): 1401-1408.

DOI：10.1016/j.mseb.2011.02.015

• n-Type diamond
• CVD
• Phosphorus
• Arsenic
• Incorporation model

Diamond is a semiconductor with superlative properties in terms of operating temperature, breakdown voltage and thermal dissipation for high power electronic applications. The p-type doping is currently controlled but it is not the case for the n-type doping. In spite of the low solubility of substitutional donors bigger than carbon, n-type material can be achieved via impurity doping during the growth of diamond with phosphorus dopant (E-c = 0.6 eV). Theoretical studies also predict arsenic as a shallower dopant (E-c = 0.4 eV). This paper outlines the n-type doping issues with phosphorus and explores the arsenic doping.

• 出版日期2011-10-25