Assessment of radiation exposure in dental cone-beam computerized tomography with the use of metal-oxide semiconductor field-effect transistor (MOSFET) dosimeters and Monte Carlo simulations

作者：Koivisto J^*; Kiljunen T; Tapiovaara M; Wolff J; Kortesniemi M

来源：Oral Surgery Oral Medicine Oral Pathology Oral Radiology, 2012, 114(3): 393-400.

DOI：10.1016/j.oooo.2012.06.003

Objectives. The aims of this study were to assess the organ and effective dose (International Commission on Radiological Protection (ICRP) 103) resulting from dental cone-beam computerized tomography (CBCT) imaging using a novel metal-oxide semiconductor field-effect transistor (MOSFET) dosimeter device, and to assess the reliability of the MOSFET measurements by comparing the results with Monte Carlo PCXMC simulations. %26lt;br%26gt;Study Design. Organ dose measurements were performed using 20 MOSFET dosimeters that were embedded in the 8 most radiosensitive organs in the maxillofacial and neck area. The dose-area product (DAP) values attained from CBCT scans were used for PCXMC simulations. The acquired MOSFET doses were then compared with the Monte Carlo simulations. %26lt;br%26gt;Results. The effective dose measurements using MOSFET dosimeters yielded, using 0.5-cm steps, a value of 153 mu Sv and the PCXMC simulations resulted in a value of 136 mu Sv. %26lt;br%26gt;Conclusions. The MOSFET dosimeters placed in a head phantom gave results similar to Monte Carlo simulations. Minor vertical changes in the positioning of the phantom had a substantial affect on the overall effective dose. Therefore, the MOSFET dosimeters constitute a feasible method for dose assessment of CBCT units in the maxillofacial region. (Oral Surg Oral Med Oral Pathol Oral Radiol 2012;114:393-400)

• 出版日期2012-9