Ultraviolet radiation effects on paramagnetic defects in low-kappa dielectrics for ultralarge scale integrated circuit interconnects

作者：Bittel B C^*; Lenahan P M; King S W

来源：Applied Physics Letters, 2010, 97(6): 063506.

DOI：10.1063/1.3478235

• deep levels
• integrated circuits
• leakage currents
• low-k dielectric thin films
• paramagnetic resonance
• point defects
• ultraviolet radiation effects

The electronic properties of low-kappa interlayer dielectric and etch stop layers are important issues in ultralarge scale integrated circuits development. Leakage currents are critical problems that are not well understood. A topic of current interest is ultraviolet curing of these films. We report on electron spin resonance and electrical measurements of low-kappa films with and without ultraviolet exposure. This work provides fundamental understanding of the deep level defects likely involved in leakage currents.

• 出版日期2010-8-9