Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

作者：Yang Zhen; Wang Jinyan^*; Xu Zhe; Li Xiaoping; Zhang Bo; Wang Maojun; Yu Min; Zhang Jincheng; Ma Xiaohua; Li Yongbing

来源：Chinese Journal of Semiconductors, 2014, 35(1): 014007.

DOI：10.1088/1674-4926/35/1/014007

• AlGaN/GaN HEMTs
• Algan/gan high electron-mobility transistors
• Current degradation
• DC stress
• Degradation mechanism
• Hot electron effects
• Saturation drain current
• Series resistances

Semi-on DC stress experiments were conducted on AlGaN/GaN high electron mobility transistors (HEMTs) to find the degradation mechanisms during stress. A positive shift in threshold voltage (V_T) and

• 出版日期2014-1
• 单位西安电子科技大学; 北京大学