Post-growth annealing treatment effects on properties of Na-doped CuInS2 thin films

作者：Zribi A^*; Kanzari M; Rezig B

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2008, 149(1): 1-6.

DOI：10.1016/j.mseb.2007.10.008

• thin films
• Na-doped CuInS2
• vapor deposition
• structural properties
• optical properties

Structural and optical properties of Na-doped CuInS2 thin films grown by double source thermal evaporation method were studied. The films were annealed from 250 to 500 degrees C in a vacuum after evaporation. X-ray diffraction pattern indicated that there are traces of Cu and In6S7, which disappeared on annealing above 350 degrees C. Good quality CUInS2:Na 0.3% films were obtained on annealing at 500 degrees C. Furthermore, we found that the absorption coefficient of Na-doped CuInS2 thin films reached 1.5 x 10(5) cm(-1). The change in band gap of the doped samples annealed in the temperatures from 250 to 500 degrees C was in the range 0.038-0.105 eV.

• 出版日期2008-3-15