Novel phosphate-functionalized silica-based dispersions for selectively polishing silicon nitride over silicon dioxide and polysilicon films

作者：Dandu P R Veera; Penta Naresh K; Peethala B C; Babu S V^*

来源：Journal of Colloid and Interface Science, 2010, 348(1): 114-118.

DOI：10.1016/j.jcis.2010.04.034

• Silicon dioxide
• Silicon nitride
• Polysilicon
• CMP
• Surface functionalization
• Electrostatic interactions

We prepared and characterized novel phosphate-functionalized silica particles, and showed that, by using them during chemical mechanical polishing, both silicon dioxide and polysilicon removal rates can be suppressed while simultaneously enhancing silicon nitride removal rates. We achieved a silicon nitride:silicon dioxide:polysilicon removal rate selectivity of (>20)1:1. The measured removal rates of silicon dioxide, silicon nitride, and polysilicon are related to the electrostatic interactions and chemical reactivity between these films and the modified-silica abrasives.

• 出版日期2010-8-1