ESD robustness concern for SOI-LIGBTs with typical latch-up immunity structures

作者：Ye, Ran; Liu, Siyang; Sun, Weifeng^*; Hou, Bo

来源：Solid-State Electronics, 2017, 137: 6-9.

DOI：10.1016/j.sse.2017.07.010

• SOI-LIGBT
• ESD robustness
• Latch-up immunity

The ESD robustness of the lateral insulated gate bipolar transistors based on SOI substrate (SOI-LIGBTs) with two typical latch-up immunity structures, including P-sink well and P++ doping layer beneath the emitter, are compared and discussed. The SOI-LIGBT with P-sink well has the strong ESD robustness and fails at the collector side due to the concentrated current density. The SOI-LIGBT with P++ doping layer fails before it is triggered due to the large surface electric field at the PN junction between P-body and N-drift regions. Considering the comprehensive performances of both devices, the SOI-LIGBT with P-sink well is suggested as the output device, which guarantees high latch-up immunity ability and strong ESD robustness simultaneously.

• 出版日期2017-11
• 单位东南大学