摘要

Micro-machining of semiconductor based on water-jet-guided laser technology was studied and compared with conventional cutting process. When cutting φ125 μm GaAs, on the condition of φ25 μm water jet and ND-YAG laser with 1064 nm wave length, the typical cutting speed is 40 mm/s and the cutting width is 23 μm. No damage to the cutting edge was found. The cutting speed is 5 times more than that of diamond sawing. Experiment indicates that the temperature of work piece is under 160°C. No debris and burrs was found on the cutting surface of wafers. The experiment of 3-point bend also shows that at the same cutting width, the breakage strength for 125 μm thick silicon wafer is more than 50% at both sides. The results show that micro-machining of semiconductor using water jet guided laser can greatly increase the product efficiency, improve surface quality and reliability of micro-apparatus. Therefore it has good market value and high benefit in the industries of semiconductor, microelectronics, wireless communication and other fields.

  • 出版日期2008

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