Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

作者：Ma Zhong-Fa^*; Zhang Peng; Wu Yong; Li Wei-Hua; Zhuang Yi-Qi; Du Lei

来源：Chinese Physics B, 2010, 19(3): 037201.

DOI：10.1088/1674-1056/19/3/037201

• trap
• RTS noise
• nano-MOSFETs

This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio ((tau) over bar (c)/(tau) over bar (e)) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.

• 出版日期2010-3
• 单位西安电子科技大学