Diamond MIP structure Schottky diode with different drift layer thickness

作者：Zhao, Dan; Hu, Chao; Liu, Zhangcheng; Wang, Hong-Xing^*; Wang, Wei; Zhang, Jingwen

来源：Diamond and Related Materials, 2017, 73: 15-18.

DOI：10.1016/j.diamond.2016.11.005

• Schottky diode
• CVD diamond
• Drift layer thickness
• Vertical structure

Vertical structure metal-insulator-p-type diamond Schottky barrier diodes (SBDs) with different thickness drift layers have been fabricated. Un-doped single crystal diamond layers were grown on HPHT boron doped diamond substrates as the drift layers. Then, Mo/Ni/Au was deposited on the drift layer as Schottky electrode and Ti/Au was deposited on the back side of diamond substrate as ohmic electrode. The ideality factor and Schottky barrier height of diode were evaluated from current-voltage curve. The minimum reverse current density of SBD could be as low as 100 pA/cm(2) at 10 V and the maximum forward current density is 7570 A/cm(2) at - 10 V. The rectification ratio and the breakdown electric field reached 12 orders and 4.2 MV/cm, respectively.

• 出版日期2017-3
• 单位西安交通大学